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деятельность
Университет ИТМО

Меню

Публикации

1. Usikov A.S., Helava H.I., Nikiforov A.Y., Puzyk M.V., Papchenko B.P., Makarov Y.N. Photoelectrochemical corrosion of gaN/AlGaN-based p-n structures // American Journal of Applied Sciences - 2016, Vol. 13, No. 7, pp. 845-852


2. Kurin S.Y., Puzyk M.V., Ermakov I.A., Antipov A.A., Barash I.S., Roenkov A.D., Ratnikov V.V., Usikov A.S., Papchenko B.P., Helava H., Makarov Y.N., Chernyakov A.E. Optical transmission of strained GaN/sapphire structures // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012048


3. Усиков А.С., Helava H., Nikiforov A., Пузык М.В., Папченко Б.П., Ковалева Ю.В., Макаров Ю.Н. Электрохимическое травление p-n-GaN/AlGaN-фотоэлектродов // Письма в Журнал технической физики - 2016. - Т. 42. - № 9. - С. 80-87


4. Usikov A.S., Ermakov I.A., Helava H., Kurin S.Y., Nikiforov A., Papchenko B.P., Puzyk M.V., Polyakov A., Lee I., Makarov Y.N. Investigation of water splitting using III-N structures // Physica status solidi (b) - 2017, Vol. 254, No. 8, pp. 1600744


5. Zubenko T.K., Puzyk M.V., Stozharov V.M., Ermakov I.A., Kovalev D.S., Ivanova S., Usikov A.S., Medvedev O.S., Papchenko B.P., Kurin S.Y., Antipov A.A., Chernyakov A.E. Etching of GaN layers at electrolysis under UV-irradiation // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012050


6. Reshchikov M.A., Usikov A.S., Helava H.I., Makarov Y.N., Puzyk M.V., Papchenko B.P. Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE // Journal of Electronic Materials - 2016, Vol. 45, No. 4, pp. 2178-2183


7. Marchenko O.N., Ermakov I.A., Puzyk M.V., Kovalev D.S., Ivanova S.A., Papchenko B.P., Usikov A.S., Chernyakov A.E. Specific of a photocurrent in GaN-based photoelectrochemical cell // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012108


8. Usikov A.S., Nikiforov A., Khait O., Medvedev O., Ermakov I.A., Papchenko B.P., Puzyk M.V., Antipov A., Barash I., Kurin S., Roenkov A., Helava H., Makarov Y. Investigation of direct water photoelectrolysis process using III-N structures // Materials Science Forum - 2017, Vol. 897, pp. 723-726


9. Fomichev A.D., Kurin S.Y., Ermakov I.A., Puzyk M.V., Usikov A.S., Helava H., Nikiforov A., Papchenko B.P., Makarov Y.N., Chernyakov A.E. Photoelectrochemical corrosion of GaN-based p-n structures // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012049


10. Usikov A.S., Helava H.I., Nikiforov A., Puzyk M.V., Papchenko B.P., Kovaleva I.V., Makarov Y.N. Electrochemical etching of p–n-GaN/AlGaN photoelectrodes // Technical Physics Letters - 2016, Vol. 42, No. 5, pp. 482-485