Научная
деятельность
Университет ИТМО

Меню

Публикации

1. Usikov A.S., Helava H.I., Nikiforov A., Puzyk M.V., Papchenko B.P., Kovaleva I.V., Makarov Y.N. Electrochemical etching of p–n-GaN/AlGaN photoelectrodes // Technical Physics Letters - 2016, Vol. 42, No. 5, pp. 482-485


2. Fomichev A.D., Kurin S.Y., Ermakov I.A., Puzyk M.V., Usikov A.S., Helava H., Nikiforov A., Papchenko B.P., Makarov Y.N., Chernyakov A.E. Photoelectrochemical corrosion of GaN-based p-n structures // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012049


3. Usikov A.S., Helava H.I., Nikiforov A.Y., Puzyk M.V., Papchenko B.P., Makarov Y.N. Photoelectrochemical corrosion of gaN/AlGaN-based p-n structures // American Journal of Applied Sciences - 2016, Vol. 13, No. 7, pp. 845-852


4. Kurin S.Y., Usikov A.S., Papchenko B.P., Helava H., Makarov Y.N., Evseenkov A.S., Tarasov S.A., Solomonov A.V. The efficiency of GaN/AlGaN p-n heterostructures in UV spectral range // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012107


5. Kurin S.Y., Puzyk M.V., Ermakov I.A., Antipov A.A., Barash I.S., Roenkov A.D., Ratnikov V.V., Usikov A.S., Papchenko B.P., Helava H., Makarov Y.N., Chernyakov A.E. Optical transmission of strained GaN/sapphire structures // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012048


6. Marchenko O.N., Ermakov I.A., Puzyk M.V., Kovalev D.S., Ivanova S.A., Papchenko B.P., Usikov A.S., Chernyakov A.E. Specific of a photocurrent in GaN-based photoelectrochemical cell // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012108


7. Usikov A.S., Ermakov I.A., Helava H., Kurin S.Y., Nikiforov A., Papchenko B.P., Puzyk M.V., Polyakov A., Lee I., Makarov Y.N. Investigation of water splitting using III-N structures // Physica status solidi (b) - 2017, Vol. 254, No. 8, pp. 1600744


8. Усиков А.С., Helava H., Nikiforov A., Пузык М.В., Папченко Б.П., Ковалева Ю.В., Макаров Ю.Н. Электрохимическое травление p-n-GaN/AlGaN-фотоэлектродов // Письма в Журнал технической физики - 2016. - Т. 42. - № 9. - С. 80-87


9. Reshchikov M.A., Usikov A.S., Helava H.I., Makarov Y.N., Puzyk M.V., Papchenko B.P. Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE // Journal of Electronic Materials - 2016, Vol. 45, No. 4, pp. 2178-2183


10. Zubenko T.K., Puzyk M.V., Stozharov V.M., Ermakov I.A., Kovalev D.S., Ivanova S., Usikov A.S., Medvedev O.S., Papchenko B.P., Kurin S.Y., Antipov A.A., Chernyakov A.E. Etching of GaN layers at electrolysis under UV-irradiation // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012050


11. Usikov A.S., Nikiforov A., Khait O., Medvedev O., Ermakov I.A., Papchenko B.P., Puzyk M.V., Antipov A., Barash I., Kurin S., Roenkov A., Helava H., Makarov Y. Investigation of direct water photoelectrolysis process using III-N structures // Materials Science Forum - 2017, Vol. 897, pp. 723-726