Научная
деятельность
Университет ИТМО

Меню

Владимир Германович Дубровский

Владимир Германович Дубровский
  • Ученая степень:
    доктор физико-математических наук
  • Должность:

Публикации

1. Berdnikov Y., Dubrovskii V.G. Size distributions and scaling relations for heterogeneous nucleation and growth of atomic chains // Journal of Physics: Conference Series - 2014, Vol. 541, No. 1, pp. 012089


2. Sibirev N.V., Koriakin A.A., Zeze D., Dubrovskii V.G. Modeling of axial heterostructure formation in ternary III-V nanowires // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012007


3. Dubrovskii V.G. Model of selective growth of III–V nanowires // Technical Physics Letters - 2015, Vol. 41, No. 12, pp. 1136-1138


4. Dubrovskii V.G., Sibirev N. V. . Factors Influencing the Interfacial Abruptness in Axial III-V Nanowire Heterostructures // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2019-2023


5. Leshchenko E.D., Turchina M.A., Dubrovskii V.G. Self-equilibration of the radius distribution in self-catalyzed GaAs nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012033


6. Dong Z., Andre Y., Dubrovskii V.G., Bougerol C., Monier G., Ramdani R.M., Trassoudaine A., Castelluci D., Leroux C.H., Gil E. Self-catalyzed growth of GaAs nanowires on silicon by HVPE // International Conference Laser Optics, LO 2016 - 2016, pp. R91


7. Dong Z., Andre Y., Dubrovskii V.G., Bougerol C., Monier G., Ramdani R.M., Trassoudaine A., Castelluci D., Leroux C.H., Gil E. Self-catalyzed growth of GaAs nanowires on silicon by HVPE // International Conference Laser Optics, LO 2016 - 2016, pp. R91


8. Leshchenko E.D., Ghasemi M., Dubrovskii V.G., Johansson J. Nucleation-limited composition of ternary III-V nanowires forming from quaternary gold based liquid alloys // CrystEngComm - 2018, Vol. 20, No. 12, pp. 1649-1655


9. Koryakin A.A. ., Leshchenko E.D., Dubrovskii V.G. Effect of elastic stresses on the formation of axial heterojunctions in ternary AIIIBV nanowires // Physics of the solid state - 2019, Vol. 61, No. 12, pp. 2459-2463


10. Zannier V., Rossi F., Dubrovskii V.G., Ercolani D., Battiato S., Sorba L. Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces // Nano Letters - 2018, Vol. 18, No. 1, pp. 167-174


11. Jean T., Dubrovskii V.G. Suppression of miscibility gaps in ternary III-V nanowires grown at high supersaturations // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 380


12. Zamani M., Tutuncuoglu G., Marti-Sanchez S., Francaviglia L., Guniat L., Ghisalberti L., Potts H., Friedl M., Markov E., Kim W., Leran J., Dubrovskii V.G., Arbiol J., Fontcuberta I Morral A. Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality // Nanoscale - 2018, Vol. 10, No. 36, pp. 17080-17091


13. Leshchenko E.D., Kuyanov P., Lapierre R.R., Dubrovskii V.G. Modeling the morphology of self-assisted GaP nanowires grown by molecular beam epitaxy // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 381


14. Dubrovskii V.G., Sokolova Z.V. Scale invariance of continuum size distribution upon irreversible growth of surface islands // Technical Physics Letters - 2015, Vol. 41, No. 6, pp. 526-528


15. Ameruddin A.S., Caroff P., Tan H., Jagadish C., Dubrovskii V.G. Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires // Nanoscale - 2015, Vol. 7, No. 39, pp. 16266-16272


16. Dubrovskii V.G., Timofeeva M.A., Kelrich A., Ritter D. Growth and morphological modeling of InP nanowires obtained by Au-catalyzed selective area MOMBE // Journal of Crystal Growth - 2015, Vol. 413, pp. 25-30


17. Rozhavskaya M.M., Lundin W.V., Lundina E.Y., Davydov V.Y., Troshkov S.I., Vasilyev A.A., Brunkov P.N., Tsatsulnikov A.F., Dubrovskii V.G. Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film // Journal of Applied Physics - 2015, Vol. 117, No. 2, pp. 024301


18. Dubrovskii V.G. Self-consistent renormalization in the theory of binary nucleation in ternary solutions // Technical Physics Letters - 2015, Vol. 41, No. 9, pp. 915-918


19. Robson M.T., Dubrovskii V.G., Lapierre R.R. Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates // Nanotechnology - 2015, Vol. 26, No. 46, pp. 465301


20. Grecenkov J., Dubrovskii V.G. Modelling polytypism in III-V nanowires: role of group V and nucleation patterns during the growth // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012017


21. Timofeeva M.A., Bolshakov A.P., Tovee P.D., Zeze D.A., Dubrovskii V.G., Kolosov O.V. Scanning thermal microscopy with heat conductive nanowire probes // Ultramicroscopy - 2016, Vol. 162, pp. 42-51


22. Dubrovskii V.G., Sibirev N. V. . Factors Influencing the Interfacial Abruptness in Axial III-V Nanowire Heterostructures // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2019-2023


23. Dubrovskii V.G., Berdnikov Y., Schmidtbauer J., Borg M., Storm K., Deppert K., Johansson J. Length Distributions of Nanowires Growing by Surface Diffusion // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2167-2172


24. Gao Q., Dubrovskii V.G., Caroff P., Wong-Leung J., Li L., Guo Y., Fu L., Tan H., Jagadish C.H. Simultaneous selective-area and vapor-liquid-solid growth of InP nanowire arrays // Nano Letters - 2016, Vol. 16, No. 7, pp. 4361-4367


25. Koryakin A.A. ., Repetun L., Sibirev N.V., Dubrovskii V.G. Self-induced GaN nanowire growth: Surface density determination // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012032


26. Лещенко Е.Д., Дубровский В.Г. Неоднородное распределение легирующей примеси в AIII-BV нитевидных нанокристаллах // Физика и техника полупроводников - 2017. - Т. 51. - № 11. - С. 1480-1483


27. Morassi M., Guan N., Dubrovskii V.G., Berdnikov Y.S., Barbier C., Mancini L., Largeau L., Babichev A.V., Kumaresan V., Julien F.H., Travers L., Gogneau N., Harmand J.C., Tchernycheva M. Selective Area Growth of GaN Nanowires on Graphene Nanodots // Crystal Growth and Design - 2020, Vol. 20, No. 2, pp. 552-559


28. Rothman A., Dubrovskii V.G., Joselevich E. Kinetics and mechanism of planar nanowire growth // Proceedings of the National Academy of Sciences of the United States of America - 2020, Vol. 117, No. 1, pp. 152-160


29. Dubrovskii V.G. Model for the formation of GaAs-Au axial nanowire heterostructures under flash lamp annealing // Физика и механика материалов = Materials Physics and Mechanics - 2019, Vol. 42, No. 4, pp. 373-379


30. Koryakin A.A. ., Leshchenko E.D., Dubrovskii V.G. Modeling the formation of InP/GaxIn(1-x)P axial nanowire heterostructures // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012058


31. Leshchenko E.D., Dubrovskii V.G. Inhomogeneous Dopant Distribution in III-V Nanowires // Semiconductors - 2017, Vol. 51, No. 11, pp. 1427-1430


32. Dubrovskii V.G., Barcus J., Kim W., Vukajlovic-Plestina J., Fontcuberta I Morral A. Does desorption affect the length distributions of nanowires? // Nanotechnology - 2019, Vol. 30, No. 47, pp. 475604


33. Roche E., Andre Y., Avit G., Bougerol C., Castelluci D., Reveret F., Gil E., Medard F., Leymarie J., Jean T., Dubrovskii V.G., Trassoudaine A. Circumventing the miscibility gap in InGaN nanowires emitting from blue to red // Nanotechnology - 2018, Vol. 29, No. 46, pp. 465602


34. Dubrovskii V.G. III-V nanowire heterostructures // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 436


35. Dubrovskii V.G., Berdnikov Y., Sibirev N.V. Regimes of radial growth for Ga-catalyzed GaAs nanowires // Applied Physics A: Materials Science and Processing - 2016, Vol. 122, No. 7, pp. 671


36. Dubrovskii V.G., Sokolova Z.V. Scale invariance of continuum size distribution upon irreversible growth of surface islands // Technical Physics Letters - 2015, Vol. 41, No. 6, pp. 526-528


37. Matteini F., Dubrovskii V.G., Ruffer D., Tutuncuoglu G., Fontana Y., Morral A.F. Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon // Nanotechnology - 2015, Vol. 26, No. 10, pp. 105603


38. Mukhin I.S., Fadeev I.V., Zhukov M.V., Dubrovskii V.G., Golubok A.O. Framed carbon nanostructures: Synthesis and applications in functional SPM tips // Ultramicroscopy - 2015, Vol. 148, pp. 151-157


39. Dubrovskii V.G. Mono- and polynucleation, atomistic growth, and crystal phase of III-V nanowires under varying group v flow // Journal of Chemical Physics - 2015, Vol. 142, No. 20, pp. 204702


40. Gomes U.P., Ercolani D., Sibirev N. V. ., Gemmi M., Dubrovskii V.G., Beltram F., Sorba L. Catalyst-free growth of InAs nanowires on Si (111) by CBE // Nanotechnology - 2015, Vol. 26, No. 41, pp. 415604


41. Dubrovskii V.G. Fully analytical description for the composition of ternary vapor-liquid-solid nanowires // Crystal Growth & Design - 2015, Vol. 15, No. 12, pp. 5738-5743


42. Dubrovskii V.G. Kinetic narrowing of size distribution // Physical Review B - 2016, Vol. 93, No. 17, pp. 174203


43. Dubrovskii V.G., Sokolova Z.V., Rylkova M.V., Zhiglinsky A.A. Composition and contact angle of Au-III-V droplets on top of Au-catalyzed III-V nanowires // Физика и механика материалов = Materials Physics and Mechanics - 2018, Vol. 36, No. 1, pp. 1-7


44. Berdnikov Y., Sibirev N. V. ., Schmidtbauer J., Borg M., Johansson J., Dubrovskii V.G. Broadening of Length Distributions of Au-catalyzed InAs Nanowires // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040001


45. Grecenkov J., Dubrovskii V.G. Chemical potentials and growth rates of gold-catalyzed ternary InGaAs nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012010


46. Leshchenko E.D., Turchina M.A., Dubrovskii V.G. The initial stage of autocatalytic growth of GaAs filamentary nanocrystals // Technical Physics Letters - 2016, Vol. 42, No. 8, pp. 818-821


47. Leshchenko E.D., Dubrovskii V.G., Johansson J. Nucleation-limited composition of Al1-xInxAs nanowires // Journal of Physics: Conference Series - 2019, Vol. 1199, pp. 012022


48. Dubrovskii V.G. Analytic form of the size distribution in irreversible growth of nanoparticles // Physical Review E - 2019, Vol. 99, No. 1, pp. 012105


49. Bai M., Huang H., Liu Z., Zhan T., Xia S., Li X., Sibirev N. V. ., Bouravleuv A., Dubrovskii V.G., Cirlin G. InAs/InP core/shell nanowire gas sensor: Effects of InP shell on sensitivity and long-term stability // Applied Surface Science - 2019, Vol. 498, pp. 143756


50. Dubrovskii V.G., Berdnikov Y., Sibirev N.V. Regimes of radial growth for Ga-catalyzed GaAs nanowires // Applied Physics A: Materials Science and Processing - 2016, Vol. 122, No. 7, pp. 671


51. Ameruddin A.S., Caroff P., Tan H., Jagadish C., Dubrovskii V.G. Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires // Nanoscale - 2015, Vol. 7, No. 39, pp. 16266-16272


52. Dubrovskii V.G., Berdnikov Y.S. Natural scaling of size distributions in homogeneous and heterogeneous rate equations with size-linear capture rates // Journal of Chemical Physics - 2015, Vol. 142, No. 12, pp. 124110


53. Dubrovskii V.G., Grecenkov J. Recipes for crystal phase design in Au-catalyzed III-V nanowires // Journal of Physics: Conference Series - 2014, Vol. 541, No. 1, pp. 012001


54. Dubrovskii V.G., Grecenkov J. Zeldovich Nucleation Rate, Self-Consistency Renormalization, and Crystal Phase of Au-Catalyzed GaAs Nanowires // Crystal Growth & Design - 2015, Vol. 15, No. 1, pp. 340-347


55. Dubrovskii V.G., Grecenkov J. Zeldovich Nucleation Rate, Self-Consistency Renormalization, and Crystal Phase of Au-Catalyzed GaAs Nanowires // Crystal Growth & Design - 2015, Vol. 15, No. 1, pp. 340-347


56. Kelrich A., Dubrovskii V.G., Calahorra Y., Cohen S., Ritter D. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE // Nanotechnology - 2015, Vol. 26, No. 8, pp. 085303


57. Dubrovskii V.G. Mono- and polynucleation, atomistic growth, and crystal phase of III-V nanowires under varying group v flow // Journal of Chemical Physics - 2015, Vol. 142, No. 20, pp. 204702


58. Sibirev N.V., Koriakin A.A., Zeze D., Dubrovskii V.G. Modeling of axial heterostructure formation in ternary III-V nanowires // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012007


59. Timofeeva M.A., Bolshakov A.P., Tovee P.D., Zeze D.A., Dubrovskii V.G., Kolosov O.V. Scanning thermal microscopy with heat conductive nanowire probes // Ultramicroscopy - 2016, Vol. 162, pp. 42-51


60. Dubrovskii V.G. Group v sensitive vapor-liquid-solid growth of Au-catalyzed and self-catalyzed III-V nanowires // Journal of Crystal Growth - 2016, Vol. 440, pp. 62-68


61. Dubrovskii V.G. Group v sensitive vapor-liquid-solid growth of Au-catalyzed and self-catalyzed III-V nanowires // Journal of Crystal Growth - 2016, Vol. 440, pp. 62-68


62. Dubrovskii V.G. The length distribution function of semiconductor filamentary nanocrystals // Technical Physics Letters - 2016, Vol. 42, No. 7, pp. 682-685


63. Koriakin A.A. ., Sibirev N. V. ., Huang H., Ren X., Dubrovskii V.G. As Flux Controlled Formation of (Al,Ga)As Axial Nanowire Heterostructures // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040002


64. Vukajlovic-Plestina J., Dubrovskii V.G., Tutuncuoglu G., Potts H., Ricca R., Meyer F., Matteini F., Leran J., Morral A. Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III–Vs on Si // Nanotechnology - 2016, Vol. 27, No. 45, pp. 455601


65. Dubrovskii V.G., Sibirev N.V., Berdnikov Y.S., Gomes U.P., Ercolani D., Zannier V., Sorba L. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires // Nanotechnology - 2016, Vol. 27, No. 37, pp. 375602


66. Dubrovskii V.G., Sibirev N.V., Berdnikov Y.S., Gomes U.P., Ercolani D., Zannier V., Sorba L. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires // Nanotechnology - 2016, Vol. 27, No. 37, pp. 375602


67. Dubrovskii V.G. Evolution of the Length and Radius of Catalyst-Free III–V Nanowires Grown by Selective Area Epitaxy // ACS Omega - 2019, Vol. 4, No. 5, pp. 8400-8405


68. Dubrovskii V.G. Geometry of GaAs nanowire seeds in SiOx/Si (111) templates // Физика и механика материалов = Materials Physics and Mechanics - 2019, Vol. 42, No. 1, pp. 14-19


69. Kim W., Dubrovskii V.G., Vukajlovic-Plestina J., Tutuncuoglu G., Francaviglia L., Guniat L., Potts H., Friedl M., Leran J., Fontcuberta I Morral A. Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires // Nano Letters - 2018, Vol. 18, No. 1, pp. 49-57


70. Sokolovskii A.S., Kim W., Vukajlovic-Plestina J., Tutuncuoglu G., Francaviglia L., Guniat L., Potts H., Friedl M., Leran J., Fontcuberta Morral A.I., Dubrovskii V.G. Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 412


71. Berdnikov Y.S., Dubrovskii V.G. Length distributions of vapor-liquid-solid nanowires // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 384


72. Dastjerdi M., Fiordaliso E., Leshchenko E.D., Akhtari-Zavareh A., Kasama T., Aagesen M., Dubrovskii V.G., Lapierre R.R. Three-fold symmetric doping mechanism in GaAs nanowires // Nano Letters - 2017, Vol. 17, No. 10, pp. 5875–5882


73. Dubrovskii V.G., Sokolova Z.V., Rylkova M.V., Zhiglinsky A.A. Nucleation of islands with vertical or truncated corner facets in vapor-liquid-solid nanowires // Физика и механика материалов = Materials Physics and Mechanics - 2019, Vol. 42, No. 2, pp. 159-164


74. Rozhavskaya M.M., Lundin W.V., Troshkov S.I., Tsatsulnikov A.F., Dubrovskii V.G. Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling // Physica Status Solidi (A) Applications and Materials Science - 2015, Vol. 212, No. 4, pp. 851-854


75. Dubrovskii V.G., Berdnikov Y.S. Size distributions and scaling in heterogeneous nucleation with size-linear rate constants // Физика и механика материалов = Materials Physics and Mechanics - 2014, Vol. 21, No. 3, pp. 207-221


76. Robson M.T., Dubrovskii V.G., Lapierre R.R. Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates // Nanotechnology - 2015, Vol. 26, No. 46, pp. 465301


77. Gomes U.P., Ercolani D., Sibirev N. V. ., Gemmi M., Dubrovskii V.G., Beltram F., Sorba L. Catalyst-free growth of InAs nanowires on Si (111) by CBE // Nanotechnology - 2015, Vol. 26, No. 41, pp. 415604


78. Berdnikov I.S., Sibirev N.V., Dubrovskii V.G., Kang J.H. Self-limiting growth and bimodal size distribution of Au nanoislands on InAs(111)B surface // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012012


79. Dubrovskii V.G., Xu T., Alvarez A.D., Plissard S.R., Caroff P., Glas F., Grandidier B. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires // Nano Letters - 2015, Vol. 15, No. 8, pp. 5580-5584


80. Dubrovskii V.G., Berdnikov Y., Schmidtbauer J., Borg M., Storm K., Deppert K., Johansson J. Length Distributions of Nanowires Growing by Surface Diffusion // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2167-2172


81. Dubrovskii V.G. Kinetic narrowing of size distribution // Physical Review B - 2016, Vol. 93, No. 17, pp. 174203


82. Dubrovskii V.G. A model of axial heterostructure formation in III–V semiconductor nanowires // Technical Physics Letters - 2016, Vol. 42, No. 3, pp. 332-335


83. Trassoudaine A., Roche E., Bougerol C., Andre Y., Avit G., Monier G., Ramdani M.R., Gil E., Castelluci D., Dubrovskii V.G. Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy // Journal of Crystal Growth - 2016, Vol. 454, pp. 1-5


84. Leshchenko E.D., Turchina M.A., Dubrovskii V.G. The initial stage of autocatalytic growth of GaAs filamentary nanocrystals // Technical Physics Letters - 2016, Vol. 42, No. 8, pp. 818-821


85. Berdnikov Y.S., Sibirev N.V., Dubrovskii V.G. Contribution of droplet volume fluctuation to dispersion of nanowire length // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012040


86. Koryakin A.A. ., Leshchenko E.D., Dubrovskii V.G. Modeling the formation of InP/GaxIn(1-x)P axial nanowire heterostructures // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012058


87. Koryakin A.A. ., Zannier V., Rossi F., Ercolani D., Battiato S., Sorba L., Dubrovskii V.G. Modeling the comosition of ternary III-V nanowires and axial nanowire heterostructures // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 383


88. Dubrovskii V.G., Sibirev N.V., Halder N.N., Ritter D. Classification of the Morphologies and Related Crystal Phases of III-V Nanowires Based on the Surface Energy Analysis // Journal of Physical Chemistry C - 2019, Vol. 123, No. 30, pp. 18693-18701


89. Bastiman F., Kuepers H., Somaschini C., Dubrovskii V.G., Geelhaar L. Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111) // Physical review materials - 2019, Vol. 3, No. 7, pp. 073401


90. Dubrovskii V.G., Berdnikov Y.S. Size distributions and scaling in heterogeneous nucleation with size-linear rate constants // Физика и механика материалов = Materials Physics and Mechanics - 2014, Vol. 21, No. 3, pp. 207-221


91. Periwal P., Sibirev N.V., Patriarche G., Salem B., Bassani F., Dubrovskii V.G., Baron T. Composition-dependent interfacial abruptness in Au-catalyzed Si1–xGex/Si/Si1–xGex nanowire heterostructures // Nano Letters - 2014, Vol. 14, No. 9, pp. 5140–5147


92. Periwal P., Sibirev N.V., Patriarche G., Salem B., Bassani F., Dubrovskii V.G., Baron T. Composition-dependent interfacial abruptness in Au-catalyzed Si1–xGex/Si/Si1–xGex nanowire heterostructures // Nano Letters - 2014, Vol. 14, No. 9, pp. 5140–5147


93. Dubrovskii V.G., Grecenkov J. Recipes for crystal phase design in Au-catalyzed III-V nanowires // Journal of Physics: Conference Series - 2014, Vol. 541, No. 1, pp. 012001


94. Mukhin I.S., Fadeev I.V., Zhukov M.V., Dubrovskii V.G., Golubok A.O. Framed carbon nanostructures: Synthesis and applications in functional SPM tips // Ultramicroscopy - 2015, Vol. 148, pp. 151-157


95. Dubrovskii V.G., Timofeeva M.A., Kelrich A., Ritter D. Growth and morphological modeling of InP nanowires obtained by Au-catalyzed selective area MOMBE // Journal of Crystal Growth - 2015, Vol. 413, pp. 25-30


96. Rozhavskaya M.M., Lundin W.V., Lundina E.Y., Davydov V.Y., Troshkov S.I., Vasilyev A.A., Brunkov P.N., Tsatsulnikov A.F., Dubrovskii V.G. Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film // Journal of Applied Physics - 2015, Vol. 117, No. 2, pp. 024301


97. Dubrovskii V.G. The theory of nucleation and polytypism of III–V semiconductor nanowires // Technical Physics Letters - 2015, Vol. 41, No. 2, pp. 203-207


98. Dubrovskii V.G., Sibirev N.V. Analytic scaling function for island-size distributions // Physical Review E - 2015, Vol. 91, No. 4, pp. 042408


99. Dubrovskii V.G. Self-consistent renormalization in the theory of binary nucleation in ternary solutions // Technical Physics Letters - 2015, Vol. 41, No. 9, pp. 915-918


100. Grecenkov J., Dubrovskii V.G. Modelling polytypism in III-V nanowires: role of group V and nucleation patterns during the growth // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012017


101. Dubrovskii V.G., Xu T., Alvarez A.D., Plissard S.R., Caroff P., Glas F., Grandidier B. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires // Nano Letters - 2015, Vol. 15, No. 8, pp. 5580-5584


102. Koriakin A.A. ., Sibirev N. V. ., Huang H., Ren X., Dubrovskii V.G. As Flux Controlled Formation of (Al,Ga)As Axial Nanowire Heterostructures // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040002


103. Leshchenko E.D., Turchina M.A., Dubrovskii V.G. Self-equilibration of the radius distribution in self-catalyzed GaAs nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012033


104. Koryakin A.A. ., Repetun L., Sibirev N.V., Dubrovskii V.G. Self-induced GaN nanowire growth: Surface density determination // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012032


105. Sokolovskii A.S., Dubrovskii V.G. Contact angle stability of gold droplets on top of GaAs nanowires in the non-stationary case // Journal of Physics: Conference Series - 2019, Vol. 1199, No. 1, pp. 012024


106. Leshchenko E.D., Kuyanov P., Laperr R., Dubrovskii V.G. Tuning the morphology of self-assisted GaP nanowires // Nanotechnology - 2018, Vol. 29, No. 22, pp. 225603


107. Tauchnitz T., Berdnikov Y., Dubrovskii V.G., Schneider H., Helm M., Dimakis E. A simple route to synchronized nucleation of self-catalyzed GaAs nanowires on silicon for sub-Poissonian length distributions // Nanotechnology - 2018, Vol. 29, No. 50, pp. 504004


108. Dubrovskii V.G. Compositional control of gold-catalyzed ternary nanowires and axial nanowire heterostructures based on IIIP1-xAsx // Journal of Crystal Growth - 2018, Vol. 498, pp. 179-185


109. Dubrovskii V.G., Grecenkov J. Recipes for crystal phase design in Au-catalyzed III-V nanowires // Journal of Physics: Conference Series - 2014, Vol. 541, No. 1, pp. 012001


110. Mukhin I.S., Fadeev I.V., Zhukov M.V., Dubrovskii V.G., Golubok A.O. Framed carbon nanostructures: Synthesis and applications in functional SPM tips // Ultramicroscopy - 2015, Vol. 148, pp. 151-157


111. Kelrich A., Dubrovskii V.G., Calahorra Y., Cohen S., Ritter D. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE // Nanotechnology - 2015, Vol. 26, No. 8, pp. 085303


112. Dubrovskii V.G. The theory of nucleation and polytypism of III–V semiconductor nanowires // Technical Physics Letters - 2015, Vol. 41, No. 2, pp. 203-207


113. Berdnikov I.S., Sibirev N.V., Dubrovskii V.G., Kang J.H. Self-limiting growth and bimodal size distribution of Au nanoislands on InAs(111)B surface // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012012


114. Dubrovskii V.G. Fully analytical description for the composition of ternary vapor-liquid-solid nanowires // Crystal Growth & Design - 2015, Vol. 15, No. 12, pp. 5738-5743


115. Dubrovskii V.G. Model of selective growth of III–V nanowires // Technical Physics Letters - 2015, Vol. 41, No. 12, pp. 1136-1138


116. Berdnikov Y., Sibirev N. V. ., Schmidtbauer J., Borg M., Johansson J., Dubrovskii V.G. Broadening of Length Distributions of Au-catalyzed InAs Nanowires // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040001


117. Gao Q., Dubrovskii V.G., Caroff P., Wong-Leung J., Li L., Guo Y., Fu L., Tan H., Jagadish C.H. Simultaneous selective-area and vapor-liquid-solid growth of InP nanowire arrays // Nano Letters - 2016, Vol. 16, No. 7, pp. 4361-4367


118. Grecenkov J., Dubrovskii V.G. Chemical potentials and growth rates of gold-catalyzed ternary InGaAs nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012010


119. Berdnikov Y.S., Sibirev N.V., Dubrovskii V.G. Contribution of droplet volume fluctuation to dispersion of nanowire length // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012040


120. Sokolovskii A.S., Robson M.T., Lapierre R.R., Dubrovskii V.G. Modeling selective-area growth of InAsSb nanowires // Nanotechnology - 2019, Vol. 30, No. 28, pp. 285601


121. Лещенко Е.Д., Дубровский В.Г. Неоднородное распределение легирующей примеси в AIII-BV нитевидных нанокристаллах // Физика и техника полупроводников - 2017. - Т. 51. - № 11. - С. 1480-1483


122. Vukajlovic-Plestina J., Kim W., Ghisalberti L., Varnavides G., Tutuncuoglu G., Potts H., Friedl M., Guniat L., Carter W.C., Dubrovskii V.G., Fontcuberta I Morral A. Fundamental aspects to localize self-catalyzed III-V nanowires on silicon // Nature Communications - 2019, Vol. 10, pp. 869


123. Friedl M., Cerveny K., Weigele P., Tutuncuoglu G., Marti-Sanchez S., Huang C., Patlatiuk T., Potts H., Sun Z., Hill M.O., Guniat L., Kim W., Zamani M., Dubrovskii V.G., Arbiol J., Lauhon L.J., Zumbuhl D.M., Fontcuberta Morral A.I. Template-Assisted Scalable Nanowire Networks // Nano Letters - 2018, Vol. 18, No. 4, pp. 2666-2671


124. Koivusalo E.S., Hakkarainen T.V., Galeti H.V., Gobato Y.G., Dubrovskii V.G., Guina M.D. Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires // Nano Letters - 2019, Vol. 19, No. 1, pp. 82–89


125. Romanov A.E., Kolesnikova A., Gutkin M.Y., Dubrovskii V.G. Elasticity of Axial Nanowire Heterostructures with Sharp and Diffuse Interfaces // Scripta Materialia - 2020, Vol. 176, pp. 42-46


126. Vilson D., Sokolovskii A.S., Goktas N.I., Dubrovskii V.G., Lapierre R.R. Photovoltaic Light Funnels Grown by GaAs Nanowire Droplet Dynamics // IEEE Journal of Photovoltaics - 2019, Vol. 9, No. 5, pp. 1225-1231


127. Rozhavskaya M.M., Lundin W.V., Troshkov S.I., Tsatsulnikov A.F., Dubrovskii V.G. Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling // Physica Status Solidi (A) Applications and Materials Science - 2015, Vol. 212, No. 4, pp. 851-854


128. Dubrovskii V.G., Berdnikov Y.S. Natural scaling of size distributions in homogeneous and heterogeneous rate equations with size-linear capture rates // Journal of Chemical Physics - 2015, Vol. 142, No. 12, pp. 124110


129. Matteini F., Dubrovskii V.G., Ruffer D., Tutuncuoglu G., Fontana Y., Morral A.F. Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon // Nanotechnology - 2015, Vol. 26, No. 10, pp. 105603


130. Berdnikov Y., Dubrovskii V.G. Size distributions and scaling relations for heterogeneous nucleation and growth of atomic chains // Journal of Physics: Conference Series - 2014, Vol. 541, No. 1, pp. 012089


131. Periwal P., Sibirev N.V., Patriarche G., Salem B., Bassani F., Dubrovskii V.G., Baron T. Composition-dependent interfacial abruptness in Au-catalyzed Si1–xGex/Si/Si1–xGex nanowire heterostructures // Nano Letters - 2014, Vol. 14, No. 9, pp. 5140–5147


132. Dubrovskii V.G., Berdnikov Y.S., Sokolova Z.V. Scaling size distribution functions of heterogeneous clusters in a linear capture coefficient model // Technical Physics Letters - 2015, Vol. 41, No. 3, pp. 242-245


133. Dubrovskii V.G., Berdnikov Y.S., Sokolova Z.V. Scaling size distribution functions of heterogeneous clusters in a linear capture coefficient model // Technical Physics Letters - 2015, Vol. 41, No. 3, pp. 242-245


134. Dubrovskii V.G., Sibirev N.V. Analytic scaling function for island-size distributions // Physical Review E - 2015, Vol. 91, No. 4, pp. 042408


135. Dubrovskii V.G. The length distribution function of semiconductor filamentary nanocrystals // Technical Physics Letters - 2016, Vol. 42, No. 7, pp. 682-685


136. Dubrovskii V.G. A model of axial heterostructure formation in III–V semiconductor nanowires // Technical Physics Letters - 2016, Vol. 42, No. 3, pp. 332-335


137. Grecenkov J., Dubrovskii V.G., Ghasemi M., Johansson J. Quaternary Chemical Potentials for Gold-Catalyzed Growth of Ternary InGaAs Nanowires // Crystal Growth and Design - 2016, Vol. 16, No. 8, pp. 4529-4530


138. Grecenkov J., Dubrovskii V.G., Ghasemi M., Johansson J. Quaternary Chemical Potentials for Gold-Catalyzed Growth of Ternary InGaAs Nanowires // Crystal Growth and Design - 2016, Vol. 16, No. 8, pp. 4529-4530


139. Trassoudaine A., Roche E., Bougerol C., Andre Y., Avit G., Monier G., Ramdani M.R., Gil E., Castelluci D., Dubrovskii V.G. Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy // Journal of Crystal Growth - 2016, Vol. 454, pp. 1-5


140. Vukajlovic-Plestina J., Dubrovskii V.G., Tutuncuoglu G., Potts H., Ricca R., Meyer F., Matteini F., Leran J., Morral A. Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III–Vs on Si // Nanotechnology - 2016, Vol. 27, No. 45, pp. 455601


141. Лещенко Е.Д., Дубровский В.Г. Неоднородное распределение легирующей примеси в AIII-BV нитевидных нанокристаллах // Физика и техника полупроводников - 2017. - Т. 51. - № 11. - С. 1480-1483


142. Dubrovskii V.G., Sokolovskii A.S. Evolution of the droplet shape in the vapor-liquid-solid growth of III-V nanowires under varying material fluxes // Физика и механика материалов = Materials Physics and Mechanics - 2019, Vol. 42, No. 3, pp. 265-271


143. Hakkarainen T., Piton M.R., Fiordaliso E., Leshchenko E.D., Koelling S., Bettini J., Vinicius Avanco Galeti H., Koivusalo E., Gobato Y.G., Rodrigues A.D., Lupo D., Koenraad P.M., Leite E.R., Dubrovskii V.G., Guina M. Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires // Physical review materials - 2019, Vol. 3, No. 8, pp. 086001


144. Zeghouane M., Avit G., Andre Y., Bougerol C., Robin Y., Ferret P., Castelluci D., Gil E., Dubrovskii V.G., Amano H. Compositional control of homogeneous InGaN nanowires with the In content up to 90% // Nanotechnology - 2019, Vol. 30, No. 4, pp. 044001


145. Hijazi H., Dubrovskii V.G., Monier G., Gil E., Leroux C., Avit G., Trassoudaine A., Bougerol C., Castellucci D., Robert-Goumet C., Andre Y. Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates // Journal of Physical Chemistry C - 2018, Vol. 122, No. 33, pp. 19230-19235


146. Sibirev N.V., Glas F., Dubrovskii V.G. Narrowing the length distributions of self-assisted III-V nanowires by nucleation antibunching // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 414