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Университет ИТМО

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Публикации

1. Dubrovskii V.G., Berdnikov Y., Sibirev N.V. Regimes of radial growth for Ga-catalyzed GaAs nanowires // Applied Physics A: Materials Science and Processing - 2016, Vol. 122, No. 7, pp. 671


2. Bourauleuv A.D., Sibirev N.V., Gilstein E.P., Brunkov P.N., Mukhin I.S., Tchernycheva M., Khrebtov A.I., Samsonenko Y.B., Cirlin G.E. Study of the electrical properties of individual (Ga, Mn)As nanowires // Semiconductors - 2014, Vol. 48, No. 3, pp. 344-349


3. Dubrovskii V.G., Sibirev N. V. . Factors Influencing the Interfacial Abruptness in Axial III-V Nanowire Heterostructures // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2019-2023


4. Yan X., Liu H., Sibirev N.V., Zhang X., Ren X. Performance enhancement of ultra-thin nanowire array solar cells by bottom reflectivity engineering // Nanomaterials - 2020, Vol. 10, No. 2, pp. 184


5. Dubrovskii V.G., Sibirev N.V., Halder N.N., Ritter D. Classification of the Morphologies and Related Crystal Phases of III-V Nanowires Based on the Surface Energy Analysis // Journal of Physical Chemistry C - 2019, Vol. 123, No. 30, pp. 18693-18701


6. Grigorieva N.R., Shtrom I.V., Grigoriev R.V., Soshnikov I.P., Reznik R.R., Samsonenko Y.B., Sibirev N. V. ., Cirlin G.E. The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires // Technical Physics Letters - 2019, Vol. 45, No. 8, pp. 835-838


7. Dubrovskii V.G., Sibirev N.V. Analytic scaling function for island-size distributions // Physical Review E - 2015, Vol. 91, No. 4, pp. 042408


8. Dubrovskii V.G., Sibirev N.V. Analytic scaling function for island-size distributions // Physical Review E - 2015, Vol. 91, No. 4, pp. 042408


9. Gomes U.P., Ercolani D., Sibirev N. V. ., Gemmi M., Dubrovskii V.G., Beltram F., Sorba L. Catalyst-free growth of InAs nanowires on Si (111) by CBE // Nanotechnology - 2015, Vol. 26, No. 41, pp. 415604


10. Gomes U.P., Ercolani D., Sibirev N. V. ., Gemmi M., Dubrovskii V.G., Beltram F., Sorba L. Catalyst-free growth of InAs nanowires on Si (111) by CBE // Nanotechnology - 2015, Vol. 26, No. 41, pp. 415604


11. Koriakin A.A. ., Sibirev N. V. ., Huang H., Ren X., Dubrovskii V.G. As Flux Controlled Formation of (Al,Ga)As Axial Nanowire Heterostructures // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040002


12. Koriakin A.A. ., Sibirev N. V. ., Huang H., Ren X., Dubrovskii V.G. As Flux Controlled Formation of (Al,Ga)As Axial Nanowire Heterostructures // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040002


13. Berdnikov Y.S., Sibirev N.V., Dubrovskii V.G. Contribution of droplet volume fluctuation to dispersion of nanowire length // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012040


14. Dubrovskii V.G., Sibirev N.V., Berdnikov Y.S., Gomes U.P., Ercolani D., Zannier V., Sorba L. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires // Nanotechnology - 2016, Vol. 27, No. 37, pp. 375602


15. Dubrovskii V.G., Sibirev N.V., Berdnikov Y.S., Gomes U.P., Ercolani D., Zannier V., Sorba L. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires // Nanotechnology - 2016, Vol. 27, No. 37, pp. 375602


16. Koryakin A.A. ., Repetun L., Sibirev N.V., Dubrovskii V.G. Self-induced GaN nanowire growth: Surface density determination // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012032


17. Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Sibirev N.V., Fedorov V.V., Ubyivovk E.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy // Beilstein Journal of Nanotechnology - 2018, Vol. 9, pp. 146-154


18. Штром И.В., Сибирев Н.В., Убыйвовк Е.В., Самсоненко Ю.Б., Хребтов А.И., Резник Р.Р., Буравлев А.Д., Цырлин Г.Э. XXI международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2017 г. Нитевидные нанокристаллы GaP/Si(111), синтезированные методом молекулярно-пучковой эпитаксии с переключением гексагональной и кубической фазy // Физика и техника полупроводников - 2018. - Т. 52. - № 1. - С. 5-9


19. Danilov V.V., Kulagina A.S., Sibirev N.V. Transient processes under excitation of ultrashort laser pulses in colloidal solutions of CdSe/ZnS quantum dots // Applied Optics - 2018, Vol. 57, No. 28, pp. 8166-8170


20. Sibirev N. V. ., Huang C., Ubyivovk E.V., Lv R., Zhao D., Guang Q., Berdnikov Y.S., Yan X., Koryakin A.A. ., Shtrom I.V. Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts // Technical Physics Letters - 2019, Vol. 45, No. 2, pp. 159-162


21. Sibirev N.V., Koriakin A.A., Zeze D., Dubrovskii V.G. Modeling of axial heterostructure formation in ternary III-V nanowires // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012007


22. Sibirev N.V., Koryakin A.A. . The influence of liquid drop shape on crystalline structure of nanowires // Technical Physics Letters - 2015, Vol. 41, No. 12, pp. 1189-1191


23. Dubrovskii V.G., Sibirev N. V. . Factors Influencing the Interfacial Abruptness in Axial III-V Nanowire Heterostructures // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2019-2023


24. Berdnikov Y., Sibirev N. V. ., Schmidtbauer J., Borg M., Johansson J., Dubrovskii V.G. Broadening of Length Distributions of Au-catalyzed InAs Nanowires // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040001


25. Koryakin A.A. ., Repetun L., Sibirev N.V., Dubrovskii V.G. Self-induced GaN nanowire growth: Surface density determination // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012032


26. Sibirev N.V., Glas F., Dubrovskii V.G. Narrowing the length distributions of self-assisted III-V nanowires by nucleation antibunching // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 414


27. Sibirev N.V., Koriakin A.A., Zeze D., Dubrovskii V.G. Modeling of axial heterostructure formation in ternary III-V nanowires // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012007


28. Berdnikov I.S., Sibirev N.V., Dubrovskii V.G., Kang J.H. Self-limiting growth and bimodal size distribution of Au nanoislands on InAs(111)B surface // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012012


29. Sibirev N. V. ., Berdnikov Y.S., Sibirev V.N. The role of elastic stresses in the formation of nitride nanowires with cubic crystalline structure // Technical Physics Letters - 2019, Vol. 45, No. 10, pp. 1050-1053


30. Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Sibirev N.V., Fedorov V.V., Ubyivovk E.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy // Beilstein Journal of Nanotechnology - 2018, Vol. 9, pp. 146-154


31. Berdnikov Y.S., Sibirev N. V. ., Khayrudinov V., Alaferdov A., Moshkalev S., Ubyivovk E., Lipsanen H., Bouravleuv A. Growth of GaAs Nanowire–Graphite Nanoplatelet Hybrid Structures // CrystEngComm - 2019, Vol. 21, No. 41, pp. 6165-6172


32. Bourauleuv A.D., Sibirev N.V., Gilstein E.P., Brunkov P.N., Mukhin I.S., Tchernycheva M., Khrebtov A.I., Samsonenko Y.B., Cirlin G.E. Study of the electrical properties of individual (Ga, Mn)As nanowires // Semiconductors - 2014, Vol. 48, No. 3, pp. 344-349


33. Sibirev N.V., Koryakin A.A. . The influence of liquid drop shape on crystalline structure of nanowires // Technical Physics Letters - 2015, Vol. 41, No. 12, pp. 1189-1191


34. Bai M., Huang H., Liu Z., Zhan T., Xia S., Li X., Sibirev N. V. ., Bouravleuv A., Dubrovskii V.G., Cirlin G. InAs/InP core/shell nanowire gas sensor: Effects of InP shell on sensitivity and long-term stability // Applied Surface Science - 2019, Vol. 498, pp. 143756


35. Dubrovskii V.G., Berdnikov Y., Sibirev N.V. Regimes of radial growth for Ga-catalyzed GaAs nanowires // Applied Physics A: Materials Science and Processing - 2016, Vol. 122, No. 7, pp. 671


36. Berdnikov Y.S., Sibirev N.V., Dubrovskii V.G. Contribution of droplet volume fluctuation to dispersion of nanowire length // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012040


37. Berdnikov Y.S., Sibirev N. V. . On the possibility of growing antimonide nanowires in the metastable wurtzite phase // Journal of Physics: Conference Series - 2019, Vol. 1199, No. 1, pp. 012012


38. Koriakin A.A. ., Reiter M., Sokolova Z.V., Sibirev N. V. . Modeling of semiconductor nanowire selective-area MOCVD growth // Journal of Physics: Conference Series - 2017, Vol. 917, No. 3, pp. 032036


39. Bolshakov A.D., Fedorov V.V., Sibirev N.V., Fetisova M.V., Moiseev E.I., Kryzhanovskaya N.V., Koval O.Y., Ubyivovk E.V., Mozharov A.M., Cirlin G.E., Mukhin I.S. Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition // Physica Status Solidi (RRL)- Rapid Research Letters - 2019, Vol. 13, No. 11, pp. 1900350


40. Berdnikov Y., Sibirev N. V. ., Schmidtbauer J., Borg M., Johansson J., Dubrovskii V.G. Broadening of Length Distributions of Au-catalyzed InAs Nanowires // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040001


41. Shtrom I.V., Sibirev N.V., Ubiivovk E.V., Samsonenko Y.B., Khrebtov A.I., Reznik R.R., Bouravleuv A.D., Cirlin G.E. GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases // Semiconductors - 2018, Vol. 52, No. 1, pp. 1-5


42. Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Sibirev N.V., Fedorov V.V., Ubyivovk E.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy // Beilstein Journal of Nanotechnology - 2018, Vol. 9, pp. 146-154


43. Sibirev N. V. ., Berdnikov Y.S., Sibirev V.N. Impact of elastic stress on crystal phase of GaP nanowires // Physics of the solid state - 2019, Vol. 61, No. 12, pp. 2313-2315


44. Berdnikov I.S., Sibirev N.V., Dubrovskii V.G., Kang J.H. Self-limiting growth and bimodal size distribution of Au nanoislands on InAs(111)B surface // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012012


45. Berdnikov Y., Sibirev N. V. ., Koryakin A.A. . Widening the length distributions in irregular arrays of self-catalyzed III–V nanowires // Semiconductors - 2019, Vol. 53, No. 16, pp. 2068-2071


46. Berdnikov Y., Sibirev N. V. ., Reznik R.R., Redkov A.V. The model for in-plane and out-of-plane growth regimes of semiconductor nanowires // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012049